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BU9829GUL-W (16Kbit)
● Absolute Maximum Ratings (Ta=25 ℃ )
Datasheet
Parameter Symbol
Rating
Unit
Remarks
Supply Voltage
Vcc1(EEPROM)
Vcc2(LDO)
-0.3 to 4.5
V
Power Dissipation
Storage Temperature
Operating
Temperature
Terminal Voltage
Pd
Tstg
Topr
－
220
-65 to 125
-30 to 85
-0.3 to Vcc ＋ 0.3
mW
℃
℃
V
When using at Ta=25 ℃ or higher, 2.2mW to be reduced per 1 ℃
● Memory cell characteristics (Ta=25 ℃ , Vcc1=1.6V to 3.6V)
Parameter
Write/Erase Cycle *1
Min.
100,000
Limits
Typ.
－
Max.
－
Unit
Times
Data Retention
*1
10
－
－
Year
*1 : Not 100% tested
● EEPROM Recommended Operating Ratings
Parameter Symbol
Rating
Unit
Supply Voltage
Input Voltage
Vcc1
V IN
1.6 to 3.6
0 to Vcc1
V
● LDO regulator Recommended Operating Ratings
Parameter Symbol
Rating
Unit
Supply Voltage
Input Voltage
Vcc2
V IN
2.9 to 3.6
0 to Vcc2
V
● Input/output capacity (Ta=25 ℃ , Frequency=5MHz)
Parameter
Input Capacitance *1
Output Capacitance *1
Symbol
C IN
C OUT
Min.
－
－
Limits
Max.
8
8
Unit
pF
pF
Conditions
V IN =GND
V OUT =GND
*1:Not 100% TESTED
● EEPROM DC operating characteristics (Unless otherwise specified, Ta=-30 ℃ to 85 ℃ , Vcc1=1.6V to 3.6V)
Parameter Symbol
Limits
Min. Typ. Max.
Unit Test condition
"H" Input Voltage1
"H" Input Voltage2
"L" Input Voltage1
"L" Input Voltage2
"L" Output Voltage1
"L" Output Voltage2
"H" Output Voltage1
"H" Output Voltage2
Input Leakage Current
Output Leakage Current
VIH1 0.7xVcc1
VIH2 0.75xVcc1
VIL1 -0.3
VIL2 -0.3
VOL1 0
VOL2 0
VOH1 Vcc1-0.2
VOH2 Vcc1-0.2
ILI -1
ILO -1
－
－
－
－
－
－
－
－
－
－
Vcc1+0.3
Vcc1+0.3
0.3xVcc1
0.25xVcc1
0.2
0.2
Vcc1
Vcc1
1
1
V
V
V
V
V
V
V
V
μA
μA
2.5 ≦ Vcc1 ≦ 3.6V
1.6 ≦ Vcc1 ＜ 2.5V
2.5V ≦ Vcc1 ≦ 3.6V
1.6V ≦ Vcc1 ＜ 2.5V
IOL=1.0mA , 2.5V ≦ Vcc1 ≦ 3.6V
IOL=1.0mA , 1.6V ≦ Vcc1 ＜ 2.5V
IOH=-0.4mA , 2.5V ≦ Vcc1 ≦ 3.6V
IOH=-100μA , 1.6V ≦ Vcc1 ＜ 2.5V
V IN =0 to Vcc1
V OUT =0 to Vcc1 , CSB=Vcc1
Operating Current Write
Operating Current Read
Standby Current
ICC1
ICC2
ICC3
ICC4
ISB
－
－
－
－
－
－
－
－
－
－
1.5
2.0
0.2
0.6
1.0
mA
mA
mA
mA
μA
Vcc1=1.8V , fSCK =2MHz, tE/W=5ms
Byte Write, Page Write, Write Status Register
Vcc1=2.5V , fSCK =5MHz,tE/W=5ms
Byte Write, Page Write, Write Status Register
Vcc1=1.8V , fSCK=2MHz , SO=OPEN
Read, Read Status Register
Vcc1=2.5V , fSCK=5MHz,SO=OPEN
Read, Read Status Register
Vcc1=3.6V , CSB=Vcc1 , SCK ,
SI=Vcc1/GND ,SO=OPEN
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? 2012 ROHM Co., Ltd. All rights reserved.
TSZ22111 ? 15 ? 001
3/23
TSZ02201-0R2R0G100400-1-2
28.AUG.2012 Rev.001
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